NAND Storage – Overview, Challenges and Future Outlook


Dr. Assaf Shappir, a Talpiot graduate, received his B.Sc. degree in physics and mathematics from the Hebrew University of Jerusalem, Israel, in 1993 and M.Sc. and Ph.D. degrees in electrical engineering (physical electronics) from the Tel Aviv University, Israel, in 1999 and 2004 respectively. The Ph.D. thesis focused on redistribution of localized trapped charge in the oxide–nitride–oxide gate dielectric stack of the NROM nonvolatile memory device.
Dr. Shappir is a semiconductor veteran with over two decades in the Industry, including in Saifun Semiconductors, where he reached the position of Vice President of Technology Development, Intel and Apple. 

 Dr. Shappir has published 9 scientific papers, 21 conference papers, coauthored 2 book chapters and received 32 patents to date. 


Demand for fast storage is growing at an exponential rate, with solid state non-volatile memory (NVM) being the only viable solution. System memory architecture is based on the principle of locality, with frequently accessed data being kept closest to the CPU and a trade-off in cost-performance is practiced using the various memory technologies. NAND Flash is unrivaled in the fast mass storage domain and thus, together with DRAM, has become an entrenched technology. 

In this talk I will review NAND Flash memory, from the underling physics of the basic memory cell, through array operation and the dominant reliability mechanisms. Next I will introduce 3D NAND, where memory cells are vertically stacked on top of each other, enabling a continuous density increase, as required to meet the growing market demand. Finally I will review NAND challenges and their storage system solutions,  including the use of error correction codes (ECC), as well as memory signal processing (MSP) techniques and memory management and redundancy schemes. My talk will conclude with a future outlook and the challenges ahead. 

Date: 02/06/2024

Time: 16:00 – 17:30 Israel Time

Important: The webinar is free but registration is required. Register here

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