ACRC Research Day 2025

Calling all members of the Israeli computer hardware community!

The Architectures & Circuit Research Center (ACRC) invites you to a day of exploration, networking, and collaboration

Register Here

16:00     Gathering and poster session

16:20     Panel: Innovation, Ethics and Public Responsibility in the world of Chip Design

Hosted by Prof. Hagit Messer Yaron

Participants: Prof. Shahar Kvatinsky-ECE Technion, Prof. Niva Elkin-Koren,  Yoav Hochberg, NextLeap Ventures

17:05     ACRC Award Ceremony

17:10     Apple’s Tape-out Project Award Ceremony

17:30     Graduate Student Research Poster Display

 

Don’t miss this chance to connect, learn, and shape the future of computer hardware!

 

For registration and further details about the event schedule and location –  register here

 

We look forward to seeing you there!

ACRC Event: Composable Chiplets

Title: Composable Chiplets

Date: 15th May, 2025

Time: 11:00 – 12:00 Israel Time

Location: 506 Zisapel Building, Technion and Zoom

Language: English

Register Here

Zoom link will be sent after registration

Abstract:

Chiplets present a compelling approach to reducing the cost and time of chip design by raising the abstraction level to the die. In this talk, I will share my decade-long experience with chiplets and examine the current challenges blocking effective chiplet-based design for startups, government, and academia. Additionally, I will introduce recent work on composable (“interchangable”) chiplets, where O(M^N) unique silicon systems can be assembled from N chiplets arbitrarily selected from a library of size M. To illustrate the potential of this approach, consider a 10 chiplet system built from a library of 10 chiplets, enabling the creation of 10⁹ unique configurations. In contrast, fewer than 10³ unique chip tapeouts occur worldwide each year.  Standing up a practical composable chiplet platform on par with the existing SoC design ecosystem will require enormous investments, but if done right has the potential of fundamentally disrupting the semiconductor industry.

Biography:

Andreas Olofsson is the founder and CEO of Zero ASIC, a semiconductor startup on a mission to democratize silicon. From 2017 – 2020, Andreas was a program manager at DARPA, where he managed 8 different US research programs in heterogeneous integration, EDA, high performance computing, machine learning, and analog computing. From 2008-2017, Andreas founded and managed Adapteva, an ultra lean fabless semiconductor startup that led the industry in processing energy efficiency. Prior to Adapteva he worked at Analog Devices for 10 years as a design manager and architect for advanced DSPs and mixed signal devices, developing products that shipped in over 100 million systems. Andreas received his Bachelor of Science in Physics and Electrical Engineering and Master of Science in Electrical Engineering from the University of Pennsylvania. He is a senior member of IEEE and holds nine U.S. patents.

ACRC Webinar: Accelerating Secure Computing for IoT Sensors

Date: 18th May, 2025

Time: 18:00 – 19:30 Israel Time

Language: English

Register Here

Abstract:

Security in IoT sensors has focused on cryptography-based but has failed to consider System-on-Chip (SoC) interoperability during side-channel, and physical attacks, as they concentrate solely on standalone behavior. This talk will discuss SoC security solutions that shield a SoC against supply voltage and physical attacks while apprising SoC interoperation. Along with the supply monitoring shields, this talk will present an efficient AES-256b encryption module accelerator, a physical unclonable function, and a true random number generator as SoC peripheral instances.

Bio:
Elkim received his Ph.D. degree in Electrical and Computer Engineering from Purdue University in 2014, where he was a Fulbright Scholar, his M.S degree from the University of São Paulo, São Paulo, Brazil, and his bachelor’s degree in Electrical Engineering from Universidad Industrial de Santander, Colombia. He is currently a SoC Architect in Samsung Semiconductor Inc. working on computing acceleration for 4G/5G modems systems. Prior to Samsung, he has worked with Rambus Inc. and GlobalFoundries on high-speed communications, systems engineering for projects solving communications bandwidth and computing bottlenecks. He was an Associate Professor at Universidad Industrial de Santander from 2016 to 2021. His research interests include SoC architecture, high-speed interfaces, computing acceleration, and efficient AI computing.

The webinar is free but registration is required. Zoom link will be sent after registration. 

Register Here

ACRC Webinar: Chiplet Design Overview: Addressing Challenges and the Future Beyond Moore’s Law

Date: 07th April, 2025

Time: 16:00 – 17:30 Israel Time

Language: English

Register Here

Abstract:

Chiplet-based design is emerging as a key strategy to address the limitations of traditional monolithic semiconductor design, especially as Moore’s Law approaches its physical limits. By partitioning complex systems into smaller, manageable “chiplets,” designers can achieve improved scalability, flexibility, and cost efficiency. Chiplet architecture allows different components of a system-on-chip (SoC) to be developed, manufactured, and integrated separately, facilitating the use of mixed-process technologies, modular upgrades, and faster time-to-market.Despite its potential, chiplet design presents several challenges. This overview explores an overview of chiplet design ranging from die to die interface, interoperability, packaging, cost , design process, signoff check, chiplet builder, thermal performance, repairability and challenges. Hopefully, it will prepare the designer in advance from design planning phase.

Bio:

Ang Boon Chong was born in Penang, Malaysia, in 1978. He received the B.E. degree in microelectronic engineering from the University Putra Malaysia, Malaysia, in 2002, and MBA from Open University Malaysia, Malaysia in 2014. He is currently affiliated with Intel Malaysia, been engaged in a wide variety of advanced nodes and methodology evaluation. He has published over 50 papers, books, white papers as well as delivered invited talks in various workshop and IEEE conferences. He is currently a tech lead within the organization as well as IEEE senior member.

The webinar is free but registration is required. Zoom link will be sent after registration. 

Register Here

ACRC Webinar: Digitization and Intelligence: unlocking the innovation of future radios

Date: 24th March, 2025

Time: 16:00 – 17:30 Israel Time

Language: English

Register Here 

Abstract:

To overcome the ever-increasing design challenges of radio front end for wireless communications, extensive research efforts have been devoted to advance the RF transmitters in recent years at both industry and academia. This talk provides an introduction on the innovations leading to more advanced digital and intelligent RF transmitters. First, an overview and the technical challenges on designing and implementation of All-digital transmitter will be introduced covering both hardware and software aspects, including active devices, switching-mode PA operation, efficient and spurious-free power encoding of signals. Then advanced techniques with demonstrators of All-digital transmitter and All-digital phased array will be showcased. In addition, Machine learning and AI techniques applied to enhance the agility and performance (i.e. operating bandwidth, efficiency, linearity) of (digital) radio transmitter will be highlighted. Perspectives on the future directions of radio transmitter towards a greener and smarter wireless communication will be shared at the end.

Biography:

Rui Ma received his Dr.-Ing. degree in Electrical Engineering from the University of Kassel, Kassel, Germany, in 2009. From 2007-to 2010, he was with the Microwave Electronics Labs at the University of Kassel as a Research Scientist working on transistor modeling and RF power amplifier design. From 2010-to 2012, he was a Senior Research Engineer with Nokia Siemens Networks, where he focused on the R&D of enabling power amplifier technologies for wideband radio at NSN Research Center in Beijing, China. From 2012 to 2022, he was with Mitsubishi Electric Research Laboratories in Cambridge, USA, where he was a Senior Principal Scientist of RF Research, responsible for technologies focused on power amplifiers, digital transmitters, 5G radio, as well as emerging applications of GaN. In 2013, he received the specification award by MIPI Alliance for the development of Analog Reference Interface (ACI) for Envelope Tracking eTrak specification. In 2019, he was awarded Mitsubishi Electric President Award for his contributions to GaN development and its RF applications. In July 2022, Dr. Ma joined pSemi, A Murata Company, where he is currently a Director of mmWave PA Systems. Dr. Ma is a senior member of IEEE and inventor or co-inventor for more than 25 U.S. patents and patent applications on RF-related topics. He serves MTT-S AdCom Committee since 2016. He is MTT Boston Chapter Chair since April 2018. Dr. Ma has also been a Visiting Scientist with THz Integrated Electronics Group at the Massachusetts Institute of Technology (MIT) from 2016 to 2021. He is an Associate Editor of IEEE Transactions on Microwave Theory and Techniques, and Associate Editor of IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology.

The webinar is free but registration is required. Zoom link will be sent after registration. 

Register Here

ACRC Webinar: Memory interfaces – past, present and future

Date: 27th January, 2025

Time: 17:00 – 18:30 Israel Time

Language: English

Register Here

Abstract:

DRAM standards have evolved tremendously over the last two-and-a-half decades, leading to diversification not only in the architecture of the memory array but also in that of the off-chip interface. Application-specific signaling channels have influenced the transceiver design nearly as much as system power and bandwidth requirements have. The influence of the multidrop server channel, along with a broad range of target environments, has led the DDR branch of JEDEC DRAMs to incorporate multi-tap Decision Feedback Equalization to maximize flexibility, while shrinking supply voltages to facilitate energy reduction have led Low-Power DDR (LPDDR) to completely rethink the output driver structure. In parallel, Graphics DDR (GDDR) has reached speeds requiring nearly equal care of the external channel and the chip itself. The adoption of multi-level signaling in GDDR6x and GDDR7 to relax on-chip frequency requirements has only heightened the need for more rigorous co-design of transceiver, package and system characteristics. And, of course, the integration of silicon interposers to support High Bandwidth Memory (HBM) has driven a paradigm shift in memory interface design. With all of these adaptations, and many others not captured here, the splintering DRAM family continues to push the boundaries of single-ended signaling into the future.

This presentation briefly explores what has driven the diversification in DRAM signaling schemes over the decades, will discuss the motivation behind present embodiments, and will project into the future to where the DRAM interface is likely headed (e.g., features and functions necessary for continued energy-efficient bandwidth scaling).

Bio: 

Tim Hollis received the Ph.D. degree in electrical engineering from Brigham Young University, Provo, UT, USA, in 2007.

In 2006, he joined the Advanced Architecture Group at Micron Technology in Boise, Idaho, USA where he contributed to several pathfinding activities including the first-generation Hybrid Memory Cube. From 2012 to 2014, he worked as a chipset architect at Qualcomm in San Diego, CA, USA. He returned to Micron in 2014, where he currently leads the Interface Pathfinding Group as a Micron Fellow. He has published 18 articles in journals, conference proceedings, and technical magazines, and holds 228 issued U.S. and international patents.

Dr. Hollis has been serving as a member of the IEEE Workshop on Microelectronics and Electron Devices Organizing Committee since 2010, including the General Chair in 2013. He has served on other IEEE conference committees as well as DesignCon’s Technical Program Committee from 2013 to 2015. From 2017 to 2020 he served as the Technology Editor for the IEEE Solid-State Circuits Magazine and as a Guest Editor for memory- and interface-related special issues in 2016 and 2019, respectively.

The webinar is free but registration is required. Zoom link will be sent after registration. 

Register Here

ACRC Course: Reliability of Semiconductor Devices

Instructor: Dr. Eitan Shauly, Tower Semiconductor
Teaching Assistant: TBD
Lectures: 3 days
Academic Points: 1
Exam: TBD
Course Fees: 1700$ (See membership options)

For registration, click here

Registration closes on March 04, 2025

Date: March 09 – 11, 2025

Time: 9:00 – 18:00

Course Content: 

In this course, we will discuss systematically the various failure mechanisms that may occur during the manufacturing and use of the semiconductor devices: electromigration, stress-induced voids, Hot-Carrier Injection, Negative Bias-Temperature Instability, oxide wear out (breakdown, Time-Depended-Dielectric-Breakdown (TDDB), and Inter-Metal-Dielectric-TDDB), and others. We also discuss topics such as automotive reliability, ISO26262, wafer foundry qualification, and environmental reliability. The course provides an excellent opportunity to obtain first-level knowledge for individuals who already have some process background but are relatively new to semiconductor reliability.

The course will be in Hebrew, but all slides will be in English.

Course Outcomes: 

Fulfilling course requirements student is expected to be able to:

  1. Understand the different reliability mechanisms in CMOS devices,
  2. Understand the dependencies between the process and the stress conditions in the field on the failure rate
  3. Fully characterize and analyze the reliability performance and figure of merits of different devices, by carful understanding the different mechanisms and the reliability characterization.
  4. Deep understanding of the way the semiconductor devices operates under stress (transistors, capacitors, resistors and more) thus how to optimize them to achieve the needed performance, with emphasize on reliability for automotive

Prerequisite: 044231 Electron Devices 1 (MOS)

Timetable :

09-Mar’25 1 09:00 ~ 09:50 Course Introduction,
Introduction to Reliability and time degradation, (TAF, CAF, VAF), modeling
2 10:00 ~ 10:50 Physical failure mechanisms: HCI, NBTI, EM, SM, GOI, ESD, others
3 11:00 ~ 12:00 Electromigration: definition; Mass motion and flux modeling; Blech length; Void formation; Stress effects
4 12:00 ~ 13:00 Lunch Break
5 13:00 ~ 13:50 Electromigration – testing and qualification;
6 14:00 ~ 15:15 Electromigration: Grain Size dependency, Alloys, Barrier metals and other process related performances improvement, N7 and N5 BEOL solutions
7 15:30 ~ 17:00 Electromigration: LT as function of Width and length, AC vs DC conditions; EM scaling limitations.
Stress Migration: Introduction
8 17:10 ~ 18:00 Stress Migration: void formation and growth; SIV modeling; Layout solution, double via solution; Stacked via sensitivity, effect of misalignment
10-Mar’25 1 09:00 ~ 09:50 Hot-Carrier-Injection: mechanism and modeling; DAHC (Drain Avalanche Hot carrier), CHE (Channel hot Electron), SHE (Substrate Hot Electron), others; Lucky Electron Model,
2 10:00 ~ 10:50 HCI: HCI degradation under worse case conditions in planar MOSFETs and FinFETs, qualification – measurement, analysis and modeling, Process solutions to reduce HCI: DDD, spacer with LDD implant, HALO/Pockets; Aging
3 11:00 ~ 12:00 Negative-Bias-Temperature-Instability: Degradation Mechanism and modeling; Interface traps; The Reactive-Diffusion (R-D) degradation model, PBTI;
4 12:00 ~ 13:00 Lunch Break
5 13:00 ~ 13:50 NBTI: Stress time and degradation saturation; NBTI recovery; Dynamic NBTI; Qualification and modeling; Process dependency; Boron Penetration, ; Oxynitridization, DPN; Fluorine passivation,
6 14:00 ~ 15:15 Gate Oxide Integrity: GOX scaling, interfaces, Leakage; Tunneling, TAT, Qbd, Vbd,; Layout sensitivity;
7 15:30 ~ 17:00 GOI: Weibull distribution; Charge inside GOX, C-V; TDDB – physical mechanisms, IBM modeling,
8 17:10 ~ 18:00 GOI / Tirgol
11-Mar’25 1 09:00 ~ 09:50 GOI: Process Enhancement GOI; Oxide-Nitride-Oxide, Nitride, Ta2O5; HKMG (Hf-based);
2 10:00 ~ 10:50 GOI:  TDDB of FinFETs, TDDB – Qualification and Modeling, IMD-TDDB
3 11:00 ~ 12:00 Plasma Induced Damage: The mechanism of PID; Plasma non-uniformity, shading, Antenna Ratio: traditional definition; Antenna rules, calculations and examples; Limitation of the traditional ratio; Cumulative plasma damage; Protection: bridging, protective diode; Well charging, protection
4 12:00 ~ 13:00 Lunch Break
5 13:00 ~ 13:50 Technology qualification: TEG, TQV, ELFR, Burn-In, HTOL, THB, 85/85
6 14:00 ~ 15:15 Technology qualification: TMCL, JEDEC JP001
7 15:30 ~ 17:00 Automotive: Reliability, AEC-Q100, ZEVI, Mission Profile, Quality, IARF16949, DFA, IPs, ISO 26262
8 17:10 ~ 18:00 Electrostatics Discharge: Mechanism, examples for failures, Prevention and protection, HBM, MM, CDM

Lecturer: Dr. Eitan Shauly, Tower Semiconductor

Bio:

Eitan N. Shauly received the B.Sc. degree in materials engineering from Ben-Gurion University, Beer-Sheva, Israel, in 1989, and M.Sc. and Ph.D. degrees in materials engineering from the Technicon — Institute of Technology, Haifa, in 1995 and 2001, respectively. He has worked for Tower Semiconductor since 1989. During 1989–1994 he was a diffusion and ion implantation engineer. During 1994–1997 he was a device/Integration engineer, focusing on process integration and process modeling. Since 1998 he is doing integration, focusing on platform development, design rules, Design-for-Manufacturing and Automotive. Dr. Shauly is also teaching at the faculty of Material Engineering, Technicon Haifa, courses related to VLSI technology: “VLSI processing” and “CMOS Devices and Integration”.

 

Registration closes on March 04, 2025

For registration, click here

ACRC Retreat 2025

ACRC Research Retreat will take place at the Ein Gedi Hotel on February 24-25, 2025.

The participants of the retreat will include faculty members, students, and representatives from the industry.

The idea is to share knowledge and foster collaborations.

About the Retreat: The retreat will bring together faculty members, graduate students, and industry representatives for two days of knowledge sharing, networking, poster sessions, and discussions.

Following the success of our previous retreat, where participants highly appreciated the opportunity to exchange ideas and build connections,

we are excited to expand this initiative with new cross-disciplinary themes.

Main Topics: This year, the retreat will focus on two pivotal areas:

Cyber-Security and Geo-Security

Machine Learning in Hardware

The program will feature keynote talks, research presentations, panel discussions, and ample opportunities for informal networking, aiming to inspire innovative collaborations and advancements in these critical fields.

Registration: https://forms.office.com/r/5Y7617LzLK

Further details will be provided later.

For any inquiries or suggestions, feel free to contact me.

Looking forward to seeing you there and making this retreat a resounding success together!

ACRC Workshop: Entrepreneurship in Semiconductors – Storage in Apple: from idea to mass production

Kobi Blechman

Storage in Apple: from idea to mass production

The lecture will explore two main themes, blending between them:

1.The challenges of being part of a startup (Anobit), the experience of being acquired by an multi-national company (Apple), and the keys to successfully integrating into a corporate environment and thriving within it.

2.Technical challenges in embedded storage solutions: addressing the innovation bridging initial technical gaps to scaling up the solution to support hundreds of millions of Apple products shipment.

Throughout the lecture, I’ll share personal stories about my journey, my experience within Anobit and the integration process at Apple.

Kobi Blechman, Sr. Director @ Apple, Education: Bsc EE + MBA, Industry experience: 30+ years in wireless and storage systems

Date: January 29, 2024

Time: 12:30 – 14:30

Location: 1003, Mayer Building, Technion

Language: Hebrew

Register Here