Speaker: Prof. Adam Teman, EnICS Labs, Bar-Ilan University
Date: 23 July,2026
Time: 11:30 Israel time
Language: English
Location: Room 506, Zisapel Building, Technion Haifa.
You can also join via Zoom.
Abstract:
On-chip memory dominates the area and power of nearly every modern chip, yet SRAM, its default solution, is costly: six transistors per bit, leaky, ratioed, and no longer scaling with logic. Conventional embedded DRAM is denser but needs special fabrication that keeps it out of standard processes. This talk makes the case for Gain-Cell embedded DRAM (GC-eDRAM), a fully logic-compatible dynamic memory that is smaller and lower-leakage than SRAM while retaining SRAM-like performance. Its central challenge is limited data retention, which will be surveyed across more than a decade of circuit, technology, and refresh techniques developed to tame it. The talk will then turn to recent directions: silicon-proven macros in advanced process technologies, GC-eDRAM as a substrate for in-memory and associative computing, cryogenic operation, and RAAAM Memory Technologies – the company that is commercializing the technology.
Bio:
Adam Teman is a Full Professor at the Faculty of Engineering at Bar-Ilan University and co-director of the Emerging Nanoscaled Integrated Circuits and Systems (EnICS) Labs. His research spans low-power and energy-efficient integrated circuits, embedded memory, physical design, hardware for emerging computing paradigms, and educating the current and future generations of chip designers. He is also a co-founder of RAAAM Memory Technologies, which is commercializing high-density logic-compatible embedded memory.
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