The presentation focuses on the design of analog transmit and receive frontends for THz wireless communication systems. The high performance mm-Wave monolithic integrated circuits, implemented in GaAs metamorphic high electron mobility transistor technologies with cutoff frequencies beyond 1 THz, integrate quadrature up- and down conversion channels for either direct/zero-IF or heterodyne architectures, LO frequency generation stages along with power amplifiers and low-noise amplifiers operating at 240 and 300 GHz RF frequencies. On the system level, these transceiver components have enabled data transmission experiments with 64 Gbit/s bit rates over 850 m link distance and up to 100 Gbit/s over 15 m indoor distances, both, as pure electronic transmit and receive frontends, and in the prospective combination of photonic transmitters with electronic receivers.
Ingmar Kallfass received the Dipl.-Ing. degree in Electrical Engineering from University of Stuttgart in 2000, and the Dr.-Ing. degree from University of Ulm in 2005. In 2001, he worked as a visiting researcher at the National University of Ireland, Dublin. In 2002, he joined the department of Electron Devices and Circuits of University of Ulm as a teaching and research assistant. In 2005, he joined the Fraunhofer Institute for Applied Solid-State Physics. From 2009 to 2012, he was a professor at the Karlsruhe Institute of Technology. Since 2013, he holds the chair for Robust Power Semiconductor Systems at the University of Stuttgart, where his major fields of research are compound semiconductor based circuits and systems for power and microwave electronics.
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