Cellular technology has witnessed five generations of evolution – the mobile UE-era ushered in by 2G (GSM/EDGE), to the future smart-phones that will powered by the enhanced spectral efficiency of 5G. Each ‘G’ improved the user experience while introducing new hardware design challenges. I compare 2/3/4/5G system requirements, derive key TX/RX/LO circuit specifications, and highlight the differences in circuit topologies suited for these contrasting specifications. Using this framework, circuit techniques to handle a diverse range of problems such as low phase-noise oscillators, improved blocker tolerance, single-RB linearity will be introduced.
Venumadhav (Venu) Bhagavatula received the B.E. degree in electronics and communication from the University of Delhi, New Delhi, India, the M.Tech. degree in electronic design technology from the Indian Institute of Science, Bangalore, India, and the Ph.D. degree in electrical engineering from the University of Washington, Seattle, WA, USA, in 2005, 2007, and 2013. Since 2014 he has been with the Advanced Circuit Design group at Samsung Semiconductors Inc., San Jose, CA, USA. His research interests include RF/mm-wave and low-power mixed signal circuits. He currently serves as a technical program committee member for the ISSCC.
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